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Digital Electronics MCQs – Practice Test 1 (Chapter 20)

Random Access Memory Cells MCQs with Answers PDF Download – Test 1

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Free Random Access Memory Cells MCQs App Download: "RAM in which both bit and bar(bit) lines are used us"; MCQ with answers: sram, dram, tram, and rram. Solve Pseudo NMOS Applications Quiz Questions, download Google e-Book (Free Chapter) to gain electronics engineering insight.

Random Access Memory Cells MCQs – Practice Test 1 PDF Download

MCQ 1: RAM in which both bit and bar(bit) lines are used us:

  1. DRAM
  2. SRAM
  3. TRAM
  4. RRAM

MCQ 2: Refresh operation is always carried out in:

  1. burst mode
  2. boot mode
  3. auto mode
  4. manual mode

MCQ 3: If operation is a read, bit line is precharged to:

  1. VDD
  2. VDD +1
  3. VDD /2
  4. 2 VDD

MCQ 4: Memory chip is available for normal operation more than:

  1. 98% of time
  2. 89% of time
  3. 45% of time
  4. 39% of time

MCQ 5: When word line is selected and circuit voltage raised to supply voltage, access transistor will:

  1. OFF
  2. ON
  3. breakdown
  4. have mid voltage

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