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Digital Electronics Exam MCQs – Practice Test 4 (Chapter 20)

Random Access Memory Cells Notes Questions with Answers PDF Download – Test 4

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Random Access Memory Cells MCQs – Practice Test 4 PDF Download

MCQ 16: Gate of NMOS transistor in dynamic memory cell is connected to the:

  1. word line
  2. bit line
  3. dye line
  4. selected line

MCQ 17: Refresh operation must be performed every:

  1. 5 to 10ms
  2. 10 to 15ms
  3. 15 t0 20ms
  4. 20 to 25ms

MCQ 18: Most RAMs are of the:

  1. non volatile type
  2. volatile type
  3. dynamic type
  4. static type

MCQ 19: Capacitor charge will leak off or dissipated due to:

  1. leakage effect
  2. charge effect
  3. dynamic effect
  4. static effect

MCQ 20: RAM which is faster and more expensive is:

  1. SRAM
  2. DRAM
  3. ERAM
  4. PRAM

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