Digital Electronics Exam MCQs – Practice Test 4 (Chapter 20)

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Random Access Memory Cells MCQs – Practice Test 4 PDF Download

MCQ 16: Gate of NMOS transistor in dynamic memory cell is connected to the:

word line
bit line
dye line
selected line

MCQ 17: Refresh operation must be performed every:

5 to 10ms
10 to 15ms
15 t0 20ms
20 to 25ms

MCQ 18: Most RAMs are of the:

non volatile type
volatile type
dynamic type
static type

MCQ 19: Capacitor charge will leak off or dissipated due to:

leakage effect
charge effect
dynamic effect
static effect

MCQ 20: RAM which is faster and more expensive is:

SRAM
DRAM
ERAM
PRAM

Random Access Memory Cells Exam Prep – Digital Electronics Notes App & e-Book

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Pass Transistor Logic Circuits MCQs

Number Systems MCQs

Pseudo NMOS Logic Circuits MCQs

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