Digital Electronics MCQs - Chapter 20
Random Access Memory Cells Multiple Choice Questions (MCQ) PDF Download - 6
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Random Access Memory Cells MCQ with Answers PDF Download: Quiz 6
Interval required to refresh the entire chip is typically less than
- 1%
- 2%
- 10%
- 30%
To write operation in static memory cell, small capacitance needs to be
- charge
- discharge
- breakdown
- ∞
Dynamic memory cell consist of
- two NMOS
- two PMOS
- one NMOS
- one PMOS
RAM which requires periodic refreshing to regenerate data is
- SRAM
- DRAM
- ERAM
- PRAM
The change of voltage on the bit line is detected by the
- column sense amplifier
- row sense amplifier
- straight sense amplifier
- diagonal sense amplifier
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Electromagnetic Theory Mock Tests
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Electromagnetic Theory MCQ with Answers
- Magnetic polarization originate from flow of
- Oliveira and Sobrinho applied FDTD method for simulating lightning strokes in a power substation in
- When electric field reduces to zero, material still remained polarized and polarization vector has a certain value, this process is known as
- Atomic or molecular orbitals with exactly one electron in them is known as
- DNG stands for