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Digital Electronics MCQs – Practice Test 6 (Chapter 20)

Random Access Memory Cells MCQ with Answers PDF Download – Test 6

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Study Random Access Memory Cells Multiple Choice Questions (MCQ Quiz) with Answers PDF (Random Access Memory Cells MCQ PDF e-Book) download Ch. 20-6 to learn Digital Electronics Course. Solve Dynamic Memory Cell Multiple Choice Questions (MCQs), Random Access Memory Cells quiz with answers PDF to enhance educational competence. Free Digital Electronics MCQ App Download: Random Access Memory Cells Learning App to learn static memory cell, random access memory cell types, dynamic memory cell amplifier career test to improve intellectual skills.

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Random Access Memory Cells MCQ – Practice Test 6 PDF Download

MCQ 26: Interval required to refresh the entire chip is typically less than:

  1. 1%
  2. 2%
  3. 10%
  4. 30%

MCQ 27: To write operation in static memory cell, small capacitance needs to be:

  1. charge
  2. discharge
  3. breakdown

MCQ 28: Dynamic memory cell consist of:

  1. two NMOS
  2. two PMOS
  3. one NMOS
  4. one PMOS

MCQ 29: RAM which requires periodic refreshing to regenerate data is:

  1. SRAM
  2. DRAM
  3. ERAM
  4. PRAM

MCQ 30: The change of voltage on the bit line is detected by the:

  1. column sense amplifier
  2. row sense amplifier
  3. straight sense amplifier
  4. diagonal sense amplifier

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