Digital Electronics Certification MCQs – Practice Test 3 (Chapter 20)

Random Access Memory Cells Quiz with Answers PDF Download – Test 3

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Random Access Memory Cells Quiz – Practice Test 3 PDF Download

MCQ 11: Elements which acts as a transmission gates allowing bidirectional current flow between flip flops and bit lines are:

coupled inverters
access transistors
latches
BJT transistors

MCQ 12: Amplified signal of column sensor amplifier is always impressed on:

input signal
resistor
storage capacitor
storage inductor

MCQ 13: Delay time in write operation of static memory is dominated by:

single-line delay
word-line delay
type-line delay
straight-line delay

MCQ 14: RAM cell which stores its bits of information as charge on the cell capacitor is:

DRAM
SRAM
TRAM
RRAM

MCQ 15: In static RAM, row decoder selects a particular row by raising the voltage of:

word line
bit line
dye line
selected line

Digital Electronics Quiz App & e-Book – Random Access Memory Cells Certification Guide

BiCMOS Digital Circuits MCQs

CMOS Logic Gates Circuits MCQs

Analog to Digital Converters MCQs

Pass Transistor Logic Circuits MCQs

CMOS Inverters MCQs

Latches and Flip Flops MCQs

Random Access Memory Cells MCQs

BJTs Digital Circuits MCQs

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