Electronic Devices MCQs – Practice Test 6 (Chapter 2)

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BJT Amplifiers MCQ – Practice Test 6 PDF Download

MCQ 26: Internal emitter resistance of BJT amplifier is equals to:

25 mV
25 mVxI_E
25 mV+I_E
25 mV/I_E

MCQ 27: A compound structure of a particular design made by two BJTs connected in such a way that the current amplified by the first BJT is amplified further by the second one is called:

Darlington pair
cascade pair
cascode pair
base pair

MCQ 28: Gain of common emitter amplifier is determined by ratio of AC output voltage to:

collector voltage
emitter voltage
base voltage
drain voltage

MCQ 29: Output of common base amplifier is always capacitive coupled from:

emitter
collector
base
drain

MCQ 30: Input resistance and current gain of common collector amplifier is:

high
low
zero
infinite

BJT Amplifiers MCQ App & e-Book – Electronic Devices Entrance Exam

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