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Digital Electronics MCQs e-Book PDF | Read Only Memory ROM App Download
Digital Electronics Competitive Exam: Practice Test 21 (Chapter 21)
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Negative charge trapped on floating gate will cause electrons to repelled from
Static power dissipation in MOS ROM can be eliminated by connecting gate to
RDSR is used in EEPROM to
Etching process can be done by selecting the particular
Endurance and data retention are two eliminations of
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