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FGMOS Functionality MCQ (Multiple Choice Questions) PDF Download
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The MCQ: Process of charging gate is; "FGMOS Functionality" App Download (Free) with answers: Self limiting; Not limiting; Mutual limiting; Zero limiting; to learn online tutor courses. Practice FGMOS Functionality Quiz Questions, download Google e-Book (Free Sample) for online engineering colleges.
FGMOS Functionality MCQs: Questions and Answers PDF Download
Electric field attract hot electrons and accelerate them to
- floating gate
- select gate
- dye gate
- bit gate
Process of charging gate is
- self limiting
- not limiting
- mutual limiting
- zero limiting
When electrons reaches the drain end of channel, they acquire
- large kinetic energy
- large potential energy
- small kinetic energy
- small potential energy
To form channel, positive channel that is applied to select gate will have to greater than that required when
- select gate is charged
- floating gate is charged
- floating gate is no charged
- select gate is infinite
Inversion layer generates
- channel
- capacitance
- inductance
- resistance
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Electromagnetic Theory Practice Questions
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Electromagnetic Theory MCQ Questions
- Entire range and scope (spectrum) of frequencies of electromagnetic radiation and their respective wavelengths and photon energies is termed as
- Vector operators must always come right before
- Atomic model which defines atom as a small, positively charged nucleus surrounded by electrons that travel in circular orbits around nucleus is termed as
- Electronic polarization is also known as
- In differential form, all Maxwell's equation quantities are assumed to be
FGMOS Functionality MCQs Book Questions
- A computer program using heuristic and specific algorithms for efficiently reducing complexity of digital electronic gate circuits is
- In SPICE, a sequence of nonlinear operating points calculated while sweeping an input voltage or current, or a circuit parameter is termed as
- When IC increases slightly as VCE increases, cause a slightly increase in
- At large output current in BiCMOS inverters, voltage developed across internal
- Creating a tangent line at end of known data and extending it beyond that limit is termed as