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Introduction to Diodes MCQ Book PDF Download | Free Electronic Devices App
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During diffusion, decrease in energy level of conduction band in n region is due to loss of
If a block of Si is doped with a trivalent impurity atoms and other part with pentavalent impurity, a boundary is formed between n and p type, called
Barrier potential for Si at 25°C is
When PN junction is formed, n region loses free electrons as they diffuse across the junction, this create a layer of
Region near PN junction is depleted across junction is called
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