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Digital Electronics MCQs – Practice Test 8 (Chapter 12)

Gallium Arsenide Digital Circuits Notes Questions with Answers PDF Download – Test 8

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Gallium Arsenide Digital Circuits MCQs – Practice Test 8 PDF Download

MCQ 36: Top layer of MESFET is built on:

  1. gate
  2. emitter
  3. collector
  4. drain

MCQ 37: In pull down transistor, output is pulled down to:

  1. ground
  2. source
  3. input
  4. output

MCQ 38: If diode level shifting network of FL inverter is connected at input side of gate it is called:

  1. SDFL
  2. MESFET
  3. DTL
  4. TTL

MCQ 39: Source follower transistor in BFL increases the capability of:

  1. output current
  2. input current
  3. positive supply current
  4. negative supply current

MCQ 40: MESFETs are usually constructed in compound semiconductor technologies lacking passivation of:

  1. low quality surface
  2. high quality surface
  3. low quality depth
  4. high quality depth

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