Digital Electronics MCQs (Engineering) From Textbook

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Digital Electronics MCQs – Practice Test 8 (Chapter 12)

Gallium Arsenide Digital Circuits Notes Questions with Answers PDF Download – Test 8

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Gallium Arsenide Digital Circuits MCQs – Practice Test 8 PDF Download

MCQ: 36

Top layer of MESFET is built on

  1. gate
  2. emitter
  3. collector
  4. drain
MCQ: 37

In pull down transistor, output is pulled down to

  1. ground
  2. source
  3. input
  4. output
MCQ: 38

If diode level shifting network of FL inverter is connected at input side of gate it is called

  1. SDFL
  2. MESFET
  3. DTL
  4. TTL
MCQ: 39

Source follower transistor in BFL increases the capability of

  1. output current
  2. input current
  3. positive supply current
  4. negative supply current
MCQ: 40

MESFETs are usually constructed in compound semiconductor technologies lacking passivation of

  1. low quality surface
  2. high quality surface
  3. low quality depth
  4. high quality depth

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