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Gallium Arsenide Basics MCQ with Answers PDF

Practice Gallium Arsenide Basics Multiple Choice Questions (MCQ), digital electronics quiz answers PDF with live worksheets for online degrees. Solve gallium arsenide digital circuits Multiple Choice Questions and Answers (MCQs), Gallium Arsenide Basics quiz questions bank for job placement test. "Gallium Arsenide Basics MCQ" PDF book: dcfl disadvantages, buffered fet logic, logic gates using mesfets, mesfets functional architecture test prep for online engineering programs.

"High power dissipation per gate in GaAs is" Multiple Choice Questions (MCQ) on gallium arsenide basics with choices 0.01-1 mw, 0.1-1 mw, 1-10 mw, and 10-100 mw for job placement test. Solve gallium arsenide basics quiz questions for merit scholarship test and certificate programs for university entrance exam.

MCQs on Gallium Arsenide Basics

1.

High power dissipation per gate in GaAs is

0.01-1 mW
0.1-1 mW
1-10 mW
10-100 mW

2.

Major disadvantage of GaAs is

high speed of operation
low speed of operation
high power dissipation
low power dissipation

3.

In GaAs, high power dissipation per gate is due to

large packing density
small packing density
infinite packing density
no packing density

4.

The major advantage of GaAs is

high speed of operation
low speed of operation
high supply voltage
low supply voltage

5.

Low packing density is available in

DTL
TTL
RTL
GaAs
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