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Integrated Circuits MCQs – Mock Test 48

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The "CMOS Transistors MCQs" App Download (iOS & Android): When high gate voltage is applied to the composition of a PMOS transistor, resistance between its source and drain contacts will be; MCQ with answers: high, low, infinite, and constant. Study introduction to digital integrated circuits questions and answers, Google e-Book to download free chapter for electronics professional learning.

CMOS Transistors MCQ – Mock Test 48 PDF Download

MCQ 236: When high gate voltage is applied to the composition of a PMOS transistor, resistance between its source and drain contacts will be:

  1. Low
  2. High
  3. Constant
  4. Infinite

MCQ 237: Source of n-type MOSFET is:

  1. n+ heavily doped
  2. n+ lightly doped
  3. p+ heavily doped
  4. p+ lightly doped

MCQ 238: Charge particles within a semiconductor move with an average velocity proportional to the:

  1. electric field
  2. electric resistance
  3. electric capacitance
  4. electric inductance

MCQ 239: Abundance of electrons in MOSFETs structure is denoted by:

  1. p+
  2. n-
  3. n+
  4. p-

MCQ 240: Drain current 'ID' is proportional to:

  1. VGS-VTh
  2. VGS+VTh
  3. VGS/VTh
  4. VGSxVTh

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