Structure and Physical Operation Quiz: App Download & e-Book PDF
Integrated Circuits Practice Test 17
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Insulated-gate FET is abbreviated as
180nm process has transistors up to
On the top of silicon dioxide (SiO2), material deposited is of
Both NMOS and PMOS transistors have a gate-source threshold voltage, below which the current through the device drops
A high voltage on the gates will cause the n-MOSFET to
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