Integrated Circuits MCQs – Mock Test 110
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MCQ 546: The first international demonstration of the multigate devices family using thin Silicon film was performed with a:
MCQ 547: Gallium Arsenide (GaAs) has higher saturated:
MCQ 548: The main characteristic of the FinFET is that it has a conducting channel wrapped by a thin:
MCQ 549: The intentional introduction of impurities into an intrinsic semiconductor for the purpose of modulating its electrical properties is known as:
MCQ 550: With no bias voltage applied to the gate, between drain and source region, two back to back diodes exist in:
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