Integrated Circuits MCQs – Mock Test 102

Introduction to MOSFETs MCQs with Answers PDF Download – Test 102

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Free "Integrated Circuits Study" App Download (iOS & Android) with MCQ: Which is located physically between the source and the drain and is insulated from the channel by an extremely thin layer of metal oxide?; with answers: source, drain, gate, and body. Practice mosfets questions and answers, Google Book to download free chapter for electronics professional training.

Introduction to MOSFETs MCQs – Mock Test 102 PDF Download

MCQ 506: Which is located physically between the source and the drain and is insulated from the channel by an extremely thin layer of metal oxide?

drain
source
body
gate

MCQ 507: In BSIM model, when a gate voltage is applied to the poly-silicon gate, e.g. NMOS with n₊poly-silicon gate, a thin depletion layer will be formed at the interface between the poly silicon and:

gate oxide
drain oxide
source oxide
body oxide

MCQ 508: In IGFET, gate current is:

0
1
high
low

MCQ 509: A 4-bit central processing unit (CPU) released by Intel Corporation in 1970's is:

Intel 4000
Intel 4004
Intel 4008
Intel 4040

MCQ 510: Without any applied electric field, in a solid, electrons move around:

linearly
saturation
randomly
not move

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