Multigate Devices MCQ (Multiple Choice Questions) PDF - 110

MCQ 546: The first international demonstration of the multigate devices family using thin Silicon film was performed with a

1. multi-gate MOSFET
2. dual-gate MOSFET
3. single-gate MOSFET
4. four-gate MOSFET

MCQ 547: Gallium Arsenide (GaAs) has higher saturated

1. proton velocity
2. neutron velocity
3. photon velocity
4. electron velocity

MCQ 548: The main characteristic of the FinFET is that it has a conducting channel wrapped by a thin

1. silicon fin
2. aluminum fin
3. boron fin
4. silicon dioxide fin

MCQ 549: The intentional introduction of impurities into an intrinsic semiconductor for the purpose of modulating its electrical properties is known as

1. doping
2. junction
3. super conduction
4. insulation

MCQ 550: With no bias voltage applied to the gate, between drain and source region, two back to back diodes exist in

1. parallel
2. series
3. either parallel or series
4. not present