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Integrated Circuits MCQs – Mock Test 110

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Download Integrated Circuits Learning App (Android & iOS) with MCQ: "First international demonstration of the multigate devices family using thin Silicon film was performed with a"; with answers: dual-gate mosfet, multi-gate mosfet, four-gate mosfet, and single-gate mosfet. Practice introduction to digital integrated circuits questions and answers, Google Book to download free chapter to strengthen circuit analysis.

Multigate Devices MCQs – Mock Test 110 PDF Download

MCQ 546: The first international demonstration of the multigate devices family using thin Silicon film was performed with a:

  1. multi-gate MOSFET
  2. dual-gate MOSFET
  3. single-gate MOSFET
  4. four-gate MOSFET

MCQ 547: Gallium Arsenide (GaAs) has higher saturated:

  1. proton velocity
  2. neutron velocity
  3. photon velocity
  4. electron velocity

MCQ 548: The main characteristic of the FinFET is that it has a conducting channel wrapped by a thin:

  1. silicon fin
  2. aluminum fin
  3. boron fin
  4. silicon dioxide fin

MCQ 549: The intentional introduction of impurities into an intrinsic semiconductor for the purpose of modulating its electrical properties is known as:

  1. doping
  2. junction
  3. super conduction
  4. insulation

MCQ 550: With no bias voltage applied to the gate, between drain and source region, two back to back diodes exist in:

  1. parallel
  2. series
  3. either parallel or series
  4. not present

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