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Integrated Circuits Practice Test 110
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The first international demonstration of the multigate devices family using thin Silicon film was performed with a
Gallium Arsenide (GaAs) has higher saturated
The main characteristic of the FinFET is that it has a conducting channel wrapped by a thin
The intentional introduction of impurities into an intrinsic semiconductor for the purpose of modulating its electrical properties is known as
With no bias voltage applied to the gate, between drain and source region, two back to back diodes exist in
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