Digital Electronics Exam MCQs – Practice Test 4 (Chapter 12)
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MCQ 16: In MESFET gate, when output voltage of the gate goes low, load capacitance:
MCQ 17: In GaAs, high power dissipation per gate is due to:
MCQ 18: MESFET when achieve threshold negative voltage, need to:
MCQ 19: As the gate is elongated laterally, keeping the active region constant, MESFET improve:
MCQ 20: Direct-coupled transistor logic (DCTL) is similar to:
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