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Digital Electronics MCQs (Engineering) From Textbook

Digital Electronics Exam MCQs – Practice Test 4 (Chapter 12)

Gallium Arsenide Digital Circuits Notes Questions with Answers PDF Download – Test 4

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The "Gallium Arsenide Digital Circuits Notes" App Download: In GaAs, high power dissipation per gate is due to; MCQ with answers: small packing density, large packing density, infinite packing density, and no packing density. Practice Electronics: AND Gate Quiz Questions, download Kobo e-Book (Free Chapter) to understand semiconductor devices.

Gallium Arsenide Digital Circuits MCQs – Practice Test 4 PDF Download

MCQ 16: In MESFET gate, when output voltage of the gate goes low, load capacitance:

  1. charge
  2. discharge
  3. becomes zero
  4. not change

MCQ 17: In GaAs, high power dissipation per gate is due to:

  1. large packing density
  2. small packing density
  3. infinite packing density
  4. no packing density

MCQ 18: MESFET when achieve threshold negative voltage, need to:

  1. OFF
  2. ON
  3. Stop
  4. no change

MCQ 19: As the gate is elongated laterally, keeping the active region constant, MESFET improve:

  1. current handling capabilities
  2. input handling capabilities
  3. output handling capabilities
  4. noise handling capabilities

MCQ 20: Direct-coupled transistor logic (DCTL) is similar to:

  1. RTL
  2. DTL
  3. ECL
  4. Schottky TTL

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