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Integrated Circuits Practice Test 102
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Which is located physically between the source and the drain and is insulated from the channel by an extremely thin layer of metal oxide?
In BSIM model, when a gate voltage is applied to the poly-silicon gate, e.g. NMOS with n+poly-silicon gate, a thin depletion layer will be formed at the interface between the poly silicon and
In IGFET, gate current is
A 4-bit central processing unit (CPU) released by Intel Corporation in 1970's is
Without any applied electric field, in a solid, electrons move around
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