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FGMOS Basics MCQ with Answers

FGMOS Basics Multiple Choice Questions (MCQ) to practice fgmos basics quiz answers PDF, fgmos basics worksheets for online degrees. Solve read only memory rom Multiple Choice Questions and Answers (MCQs), "FGMOS Basics Quiz Questions" and answers for graduate school interview questions. Learn rom introduction, fgmos functionality, extrapolation, fgmos basics test prep for tricky trivia questions.

"Usually Fowler-Nordheim tunneling and hot-carrier injection mechanisms are used to modify the amount of charge stored in the" Multiple Choice Questions (MCQ) on fgmos basics with choices floating gate, select gate, bit gate, and dye gate for graduate school interview questions. Solve fgmos basics quiz questions for merit scholarship test and certificate programs for online undergraduate engineering schools.

MCQs on FGMOS Basics

1.

Usually Fowler-Nordheim tunneling and hot-carrier injection mechanisms are used to modify the amount of charge stored in the

floating gate
select gate
bit gate
dye gate

2.

In 1989,Intel employed the FGMOS as an

digital volatile memory element
analog volatile memory element
digital non-volatile memory element
analog non-volatile memory element

3.

An FGMOS can be fabricated by electrically isolating the gate of a standard MOS transistor, so that there is no gate

resistive connection
inductive connection
capacitance connection
transitive connection

4.

Memory cell made up of FGMOS is called

stacked gate cell
unstacked gate cell
tramp gate cell
stramp gate cell

5.

Floating gate transistor based ROM is consist of arrays which are of number of

stacked gate cell
unstacked gate cell
tramp gate cell
stramp gate cell