FGMOS Basics Multiple Choice Questions with Answers – PDF Download

Usually Fowler-Nordheim tunneling and hot-carrier injection mechanisms are used to modify the amount of charge stored in the

1. floating gate
2. select gate
3. bit gate
4. dye gate

In 1989,Intel employed the FGMOS as an

1. digital volatile memory element
2. analog volatile memory element
3. digital non-volatile memory element
4. analog non-volatile memory element

An FGMOS can be fabricated by electrically isolating the gate of a standard MOS transistor, so that there is no gate

1. resistive connection
2. inductive connection
3. capacitance connection
4. transitive connection

Memory cell made up of FGMOS is called

1. stacked gate cell
2. unstacked gate cell
3. tramp gate cell
4. stramp gate cell

Floating gate transistor based ROM is consist of arrays which are of number of

1. stacked gate cell
2. unstacked gate cell
3. tramp gate cell
4. stramp gate cell