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FGMOS Basics MCQ with Answers PDF

FGMOS Basics Multiple Choice Questions (MCQ), FGMOS Basics quiz answers PDF with digital electronics live worksheets for online degrees. Solve read only memory rom Multiple Choice Questions and Answers (MCQs), FGMOS Basics quiz questions for graduate school interview questions. FGMOS Basics Interview Questions PDF: rom introduction, fgmos functionality, extrapolation, fgmos basics test prep for tricky trivia questions.

"Usually Fowler-Nordheim tunneling and hot-carrier injection mechanisms are used to modify the amount of charge stored in the" MCQ PDF on fgmos basics with choices floating gate, select gate, bit gate, and dye gate for graduate school interview questions. Solve fgmos basics quiz questions for merit scholarship test and certificate programs for online undergraduate engineering schools.

MCQs on FGMOS Basics Quiz

MCQ: Usually Fowler-Nordheim tunneling and hot-carrier injection mechanisms are used to modify the amount of charge stored in the

floating gate
select gate
bit gate
dye gate

MCQ: In 1989,Intel employed the FGMOS as an

digital volatile memory element
analog volatile memory element
digital non-volatile memory element
analog non-volatile memory element

MCQ: An FGMOS can be fabricated by electrically isolating the gate of a standard MOS transistor, so that there is no gate

resistive connection
inductive connection
capacitance connection
transitive connection

MCQ: Memory cell made up of FGMOS is called

stacked gate cell
unstacked gate cell
tramp gate cell
stramp gate cell

MCQ: Floating gate transistor based ROM is consist of arrays which are of number of

stacked gate cell
unstacked gate cell
tramp gate cell
stramp gate cell