FGMOS Basics Multiple Choice Questions with Answers – PDF Download

MCQ 1: Usually Fowler-Nordheim tunneling and hot-carrier injection mechanisms are used to modify the amount of charge stored in the:

1. floating gate
2. select gate
3. bit gate
4. dye gate

MCQ 2: In 1989,Intel employed the FGMOS as an:

1. digital volatile memory element
2. analog volatile memory element
3. digital non-volatile memory element
4. analog non-volatile memory element

MCQ 3: An FGMOS can be fabricated by electrically isolating the gate of a standard MOS transistor, so that there is no gate:

1. resistive connection
2. inductive connection
3. capacitance connection
4. transitive connection

MCQ 4: Memory cell made up of FGMOS is called:

1. stacked gate cell
2. unstacked gate cell
3. tramp gate cell
4. stramp gate cell

MCQ 5: Floating gate transistor based ROM is consist of arrays which are of number of:

1. stacked gate cell
2. unstacked gate cell
3. tramp gate cell
4. stramp gate cell