FGMOS Basics MCQs Quiz Online PDF | Download eBooks
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"Usually Fowler-Nordheim tunneling and hot-carrier injection mechanisms are used to modify the amount of charge stored in the" Multiple Choice Questions (MCQ) on fgmos basics with choices floating gate, select gate, bit gate, and dye gate for graduate school interview questions. Practice fgmos basics quiz questions for merit scholarship test and certificate programs for online undergraduate engineering schools.
MCQs on FGMOS Basics PDF Download eBook
MCQ: Usually Fowler-Nordheim tunneling and hot-carrier injection mechanisms are used to modify the amount of charge stored in the
- floating gate
- select gate
- bit gate
- dye gate
A
MCQ: In 1989,Intel employed the FGMOS as an
- digital volatile memory element
- analog volatile memory element
- digital non-volatile memory element
- analog non-volatile memory element
D
MCQ: An FGMOS can be fabricated by electrically isolating the gate of a standard MOS transistor, so that there is no gate
- resistive connection
- inductive connection
- capacitance connection
- transitive connection
A
MCQ: Memory cell made up of FGMOS is called
- stacked gate cell
- unstacked gate cell
- tramp gate cell
- stramp gate cell
A
MCQ: Floating gate transistor based ROM is consist of arrays which are of number of
- stacked gate cell
- unstacked gate cell
- tramp gate cell
- stramp gate cell
A