Engineering MCQs From Integrated Circuits Textbook

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Integrated Circuits Exam Prep: Certification Test 507

BSIM Family Learning App & e-Book: MCQ 507

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MCQ: 507

In BSIM model, when a gate voltage is applied to the poly-silicon gate, e.g. NMOS with n+poly-silicon gate, a thin depletion layer will be formed at the interface between the poly silicon and

  1. gate oxide
  2. drain oxide
  3. source oxide
  4. body oxide

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