Integrated Circuits Certification Exam Tests
Integrated Circuits Practice Test 17
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MCQ 81: Insulated-gate FET is abbreviated as
MCQ 82: 180nm process has transistors up to
MCQ 83: On the top of silicon dioxide (SiO2), material deposited is of
MCQ 84: Both NMOS and PMOS transistors have a gate-source threshold voltage, below which the current through the device drops
MCQ 85: A high voltage on the gates will cause the n-MOSFET to
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