Basic Electronics Practice Test 26
Basic Electronics Questions and Answers for Interview PDF Download - 26
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The Quiz: Immobile positive and negative ions make diode, "Diode" App Download (iOS & Android) Free with answers p region, n region, depletion region and ground region to learn online engineering courses. Solve basic electronics questions and answers, Google eBook to download free sample for university entrance exam.
Basic Electronics MCQ: Basic Electronics Questions and Answers for Interview PDF Download - 26
MCQ 126: Immobile positive and negative ions make diode
- n region
- p region
- depletion region
- ground region
MCQ 127: Light that has range of wavelengths greater than visible light is called
- Ultraviolet
- Infrared
- Sound
- Microwave
MCQ 128: Rapid buildup of conduction electrons in a pn junction due to excessive reverse bias voltage is called
- zener breakdown
- avalanche
- attenuation
- saturation
MCQ 129: An unwanted signal in a processing system is called
- error
- virus
- noise
- baud`
MCQ 130: Region of semiconductor which is very thin and lightly doped as compared to other regions is called
- emitter
- collector
- source
- base
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Digital Electronics Practice Questions
- During precharge of row address decoder, all word lines are pulled high to
- Diode Transistor Logic 'DTL' is also known as
- ECL 10K series dissipates power per gate of about
- ECL belongs to family of
- Narrower the gate modulated carrier channel, better the ability of handling
- Pseudo-NMOS inverter, NMOS will be in triode region when
Basic Electronics Questions and Answers for Interview Practice Tests
- A passive electrical component that implement electrical resistance as a circuit element is called
- Transistor in which both free electrons and holes are current carriers is termed as
- Amount of energy required to produce full conduction across the pn junction
- In FETs, process of removing channel of charge carriers and thus decreasing
- Conduction path between drain and source in a FET is called
- One of the three terminals of FET analogous to the collector of a BJT is
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