Digital Electronics MCQs - Chapter 20
Random Access Memory Cells Trivia Questions and Answers PDF - 4
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Random Access Memory Cells Questions & Answers PDF Download: MCQ Quiz 4
MCQ 16: Gate of NMOS transistor in dynamic memory cell is connected to the
- word line
- bit line
- dye line
- selected line
MCQ 17: Refresh operation must be performed every
- 5 to 10ms
- 10 to 15ms
- 15 t0 20ms
- 20 to 25ms
MCQ 18: Most RAMs are of the
- non volatile type
- volatile type
- dynamic type
- static type
MCQ 19: Capacitor charge will leak off or dissipated due to
- leakage effect
- charge effect
- dynamic effect
- static effect
MCQ 20: RAM which is faster and more expensive is
- SRAM
- DRAM
- ERAM
- PRAM
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Electromagnetic Theory MCQ with Answers
- Pendry et al. proposed dilute metals with extremely low plasma frequency in
- Electrons can neither absorbs nor radiates energy when electron's
- Dielectric constant of paraffin is
- FDTD is a
- ?Differential operator?used in?vector calculus is termed as
- Materials with ∊ < 0 and µ>0 exhibit negative permitivity at certain frequencies below the
Random Access Memory Cells MCQ Book Questions
- Positive feedback in the loop means signal around the loop and voltage rise or decay
- Low noise margin for dynamic logic circuit is equals to
- In cutoff region, transistor behaves like open switch between
- Two diodes voltage drop in MESFET is approximately equals to
- When switch is open, there is open connection between
- When base lead is open, base current will be